Switching in Metal–Organic Frameworks

In recent years, metal–organic frameworks (MOFs) have become an area of intense research interest because of their adjustable pores and nearly limitless structural diversity deriving from the design of different organic linkers and metal structural building units (SBUs). Among the recent great challenges for scientists include switchable MOFs and their corresponding applications. Switchable MOFs are a type of smart material that undergo distinct, reversible, chemical changes in their structure upon exposure to external stimuli, yielding interesting technological applicability. Although the process of switching shares similarities with flexibility, very limited studies have been devoted specifically to switching, while a fairly large amount of research and a number of Reviews have covered flexibility in MOFs. This Review focuses on the properties and general design of switchable MOFs. The switching activity has been delineated based on the cause of the switching: light, spin crossover (SCO), redox, temperature, and wettability.     

A Photochemical/Thermal Switch Based on 4,4′-Bis(benzimidazolio)stilbene: Synthesis and Supramolecular Properties.

Stilbene derivatives are well-recognised substructures of molecular switches based on photochemically and/or thermally induced (E)/(Z) isomerisation. We combined a stilbene motif with two benzimidazolium arms to prepare new sorts of supramolecular building blocks and examined their binding properties towards cucurbit[n]urils (n=7, 8) and cyclodextrins (β-CD, γ-CD) in water. Based on the ¹H NMR data and molecular dynamics simulations, we found that two distinct complexes with different stoichiometry, i. e., guest@β-CD and guest@β-CD₂, coexist in equilibrium in a water solution of the (Z)-stilbene-based guests. We also demonstrated that the bis(benzimidazolio)stilbene guests can be transformed from the (E) into the (Z) form via UV irradiation and back via thermal treatment in DMSO.     

Electrochemistry in Carbon‐based Quantum Dots

Electrochemistry belongs to an important branch of chemistry that deals with the chemical changes produced by electricity and the production of electricity by chemical changes. Therefore, it can not only act a powerful tool for materials synthesis, but also offer an effective platform for sensing and catalysis. As extraordinary zero‐dimensional materials, carbon‐based quantum dots (CQDs) have been attracting tremendous attention due to their excellent properties such as good chemical stability, environmental friendliness, nontoxicity and abundant resources. Compared with the traditional methods for the preparation of CQDs, electrochemical (EC) methods offer advantages of simple instrumentation, mild reaction conditions, low cost and mass production. In return, CQDs could provide cost‐effective, environmentally friendly, biocompatible, stable and easily‐functionalizable probes, modifiers and catalysts for EC sensing. However, no specific review has been presented to systematically summarize both aspects until now. In this review, the EC preparation methods of CQDs are critically discussed focusing on CQDs. We further emphasize the applications of CQDs in EC sensors, electrocatalysis, biofuel cells and EC flexible devices. This review will further the experimental and theoretical understanding of the challenges and future prospective in this field, open new directions on exploring new advanced CQDs in EC to meet the high demands in diverse applications.     

Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors

Field effect transistors (FETs) based on 2D materials are of great interest for applications in ultrathin electronic and sensing devices. Here we demonstrate the possibility to add optical switchability to graphene FETs (GFET) by functionalizing the graphene channel with optically switchable azobenzene molecules. The azobenzene molecules were incorporated to the GFET channel by building a van der Waals heterostructure with a carbon nanomembrane (CNM), which is used as a molecular interposer to attach the azobenzene molecules. Under exposure with 365 nm and 455 nm light, azobenzene molecules transition between cis and trans molecular conformations, respectively, resulting in a switching of the molecular dipole moment. Thus, the effective electric field acting on the GFET channel is tuned by optical stimulation and the carrier density is modulated.     

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

The influence of the width of a lattice-matched Al_0.82In_0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al_0.82In_0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.     

用各向同性材料实现宽带声波功能器件设计

利用坐标变换的方法并结合保角映射技术,论文介绍了一种利用常规的各向同性材料来设计声波器件的方法.基于此理论,设计了二维声波隐身斗篷,并进行有限元模拟,证明了该器件的有效性.另外由于设计中没有利用材料共振的性质,所以器件是宽带有效的.该方法将有助于拓宽声波功能器件的设计,并为实验验证声波器件提供了可能.     

The interlayer shear effect on graphene multilayer resonators

Graphene nanostrips with single or few layers can be used as bending resonators with extremely high sensitivity to environmental changes. In this paper we report molecular dynamics (MD) simulation results on the fundamental and secondary resonant frequencies f of cantilever graphene nanostrips with different layer number n and different nanostrip length L. The results deviate significantly from the prediction of not only the Euler-Bernoulli beam theory (f∝nL⁻²), but also the Timoshenko's model. Since graphene nanostrips have extremely high intralayer Young's modulus and ultralow interlayer shear modulus, we propose a multibeam shear model (MBSM) that neglects the intralayer stretch but accounts for the interlayer shear. The MBSM prediction of the fundamental and secondary resonant frequencies f can be well expressed in the form f−f_mono∝[(n-1)/n]^bL^−2(1−b), where f_mono denotes the corresponding resonant frequency as the layer number is 1, with b=0.61 and 0.77 for the fundamental and secondary resonant modes. Without any additional parameters fitting, the prediction from MBSM agrees excellently with the MD simulation results. The model is thus of importance for designing multilayer graphene nanostrips based applications, such as resonators, sensors and actuators, where interlayer shear has apparent impacts on the mechanical deformation, vibration and energy dissipation processes therein.     

A finite‐volume scheme for the multidimensional quantum drift‐diffusion model for semiconductors

A finite‐volume scheme for the stationary unipolar quantum drift‐diffusion equations for semiconductors in several space dimensions is analyzed. The model consists of a fourth‐order elliptic equation for the electron density, coupled to the Poisson equation for the electrostatic potential, with mixed Dirichlet‐Neumann boundary conditions. The numerical scheme is based on a Scharfetter‐Gummel type reformulation of the equations. The existence of a sequence of solutions to the discrete problem and its numerical convergence to a solution to the continuous model are shown. Moreover, some numerical examples in two space dimensions are presented. © 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 27: 1483–1510, 2011     

基于迈克耳孙干涉仪的微机械光纤信号调制器

基于迈克耳孙干涉仪原理,设计了利用双光束干涉效应的微机械光纤信号调制器.实验中从输入端输入的光纤信号,经分光板后分为光强相等的透射光束与反射光束;调制信号以电压形式加载于压电陶瓷,使其伸缩振荡,以调制透射光束与反射光束之间的光程差;透射光束与反射光束经透镜聚焦后在输出端面发生双光束干涉,在输出端输出被调制的光信号,再耦...     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.